| Full text | |
| Author(s): |
Total Authors: 4
|
| Affiliation: | [1] FATEC. CEETEPS. Departamento de Ensino Geral
[2] UNIVAP. Instituto de Pesquisa e Desenvolvimento
[3] UNIFESP. Instituto de Ciência e Tecnologia
[4] UNIVAP. Instituto de Pesquisa e Desenvolvimento
Total Affiliations: 4
|
| Document type: | Journal article |
| Source: | MATERIA-RIO DE JANEIRO; v. 19, n. 3, p. 274-290, 2014-09-00. |
| Abstract | |
This paper discusses the use of silicon carbide (SiC), in bulk and thin-film form, in MEMS (Micro-Electro-Mechanical Systems) sensors for extreme environment applications, especially in aerospace. The physical and chemical properties of SiC that make it a suitable material for electronic devices and sensors are described. Concepts, developments and applications of MEMS technology are presented. An overview of the current stage of development of SiC-based MEMS sensors and an analysis of research conducted in this area in Brazil and abroad, both in universities and industries are also presented. The recent progress made, difficulties encountered and the impact of these investigations are discussed as well as the outlook for the near future. (AU) | |
| FAPESP's process: | 11/50773-0 - Center of excellence in physics and applications of plasmas |
| Grantee: | Ricardo Magnus Osório Galvão |
| Support Opportunities: | Research Projects - Thematic Grants |