- Research Grants
Freitas, F. L. ; Marques, M. ; Teles, L. K.
Total Authors: 3
|Document type:||Journal article|
|Source:||AIP ADVANCES; v. 6, n. 8 AUG 2016.|
|Web of Science Citations:||2|
We provide approximate quasiparticle-corrected band gap energies for quaternary cubic and hexagonal AlxGayIn1-x-yN semiconductor alloys, employing a cluster expansion method to account for the inherent statistical disorder of the system. Calculated values are compared with photoluminescence measurements and discussed within the currently accepted model of emission in these materials by carrier localization. It is shown that bowing parameters are larger in the cubic phase, while the range of band gap variation is bigger in the hexagonal one. Experimentally determined transition energies are mostly consistent with band-to-band excitations. (C) 2016 Author(s). (AU)