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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Understanding the fundamental electrical and photoelectrochemical behavior of a hematite photoanode

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Author(s):
Soares, Mario R. S. ; Goncalves, Ricardo H. ; Nogueira, Icamira C. ; Bettini, Jefferson ; Chiquito, Adenilson J. ; Leite, Edson R.
Total Authors: 6
Document type: Journal article
Source: Physical Chemistry Chemical Physics; v. 18, n. 31, p. 21780-21788, AUG 31 2016.
Web of Science Citations: 10
Abstract

Hematite is considered to be the most promising material used as a photoanode for water splitting and here we utilized a sintered hematite photoanode to address the fundamental electrical, electrochemical and photoelectrochemical behavior of this semiconductor oxide. The results presented here allowed us to conclude that the addition of Sn4+ decreases the grain boundary resistance of the hematite polycrystalline electrode. Heat treatment in a nitrogen (N-2) atmosphere also contributes to a decrease of the grain boundary resistance, supporting the evidence that the presence of oxygen is fundamental for the formation of a voltage barrier at the hematite grain boundary. The N-2 atmosphere affected both doped and undoped sintered electrodes. We also observed that the heat treatment atmosphere modifies the surface states of the solid-liquid interface, changing the charge-transfer resistance. A two-step treatment, with the second being performed at a low temperature in an oxygen (O-2) atmosphere, resulted in a better solid-liquid interface. (AU)

FAPESP's process: 13/07296-2 - CDMF - Center for the Development of Functional Materials
Grantee:Elson Longo da Silva
Support type: Research Grants - Research, Innovation and Dissemination Centers - RIDC