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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Impact of high N-2 flow ratio on the chemical and morphological characteristics of sputtered N-DLC films

Full text
Author(s):
Leal, G. ; Fraga, M. A. ; Rasia, L. A. ; Massi, M.
Total Authors: 4
Document type: Journal article
Source: SURFACE AND INTERFACE ANALYSIS; v. 49, n. 2, p. 99-106, FEB 2017.
Web of Science Citations: 2
Abstract

Because of their outstanding characteristics, diamond-like carbon (DLC) thin films have been recognized as interesting materials for a variety of applications. For this reason, the effects of the incorporation of different elements on their fundamental properties have been the focus of many studies. In this work, nitrogen-incorporated DLC films were deposited on Si (100) substrates by DC magnetron sputtering of a graphite target under a variable N-2 gas flow rate in CH4 + N-2 + Ar gasmixtures. The influence of high N-2 flow ratios (20, 40 and 60%) on the chemical, structural and morphological properties of N-DLC films was investigated. Different techniques including field emission gun-equipped scanning electron microscope (FEG-SEM), energy-dispersive X-ray spectroscopy (EDS), atomic force microscopy (AFM), profilometry, Rutherford backscattering spectrometry (RBS) and Raman spectroscopy (325-nm and 514-nm excitation) were used to examine the properties of the N-DLC films. Thus, the incorporation of nitrogen was correlated with the morphology, roughness, thickness, structure and chemical bonding of the films. Overall, the results obtained indicate that the fundamental properties of N-DLC films are not only related to the nitrogen content in the film but also to the type of chemical bonds formed. Copyright (C) 2016 John Wiley \& Sons, Ltd. (AU)

FAPESP's process: 14/18139-8 - Growth and doping studies of mono-crystalline CVD-diamond, dye-colored via discharge of high-power mW 2.45 GHz
Grantee:Mariana Amorim Fraga
Support Opportunities: Scholarships in Brazil - Post-Doctoral
FAPESP's process: 11/50773-0 - Center of excellence in physics and applications of plasmas
Grantee:Ricardo Magnus Osório Galvão
Support Opportunities: Research Projects - Thematic Grants
FAPESP's process: 13/17045-7 - Fabrication and characterization of piezoresistive sensors based on DLC thin films
Grantee:Gabriela Leal
Support Opportunities: Scholarships in Brazil - Doctorate