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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

On the transient response of organic electrochemical transistors

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Author(s):
Faria, Gregorio C. ; Duong, Duc T. ; Salleo, Alberto
Total Authors: 3
Document type: Journal article
Source: ORGANIC ELECTRONICS; v. 45, p. 215-221, JUN 2017.
Web of Science Citations: 14
Abstract

We present a universal model for the transient drain current response in organic electrochemical transistors (OECTs). Using equivalent circuits and charge injection physics, we are able to predict the drain current in OECT devices upon application of a gate voltage input. The model is applicable to both plain and membrane-functionalized devices, and allows us to extract useful physical quantities such as resistances and capacitances, which are related to functional properties of the system. We are also able to use the model to reconstruct the magnitude and shape in time of an applied voltage source based on the observed drain current response. This was experimentally demonstrated for drain current measurements under an applied action potential. (C) 2017 Elsevier B.V. All rights reserved. (AU)

FAPESP's process: 13/21034-0 - Organic bioelectronics: from materials characterization to devices development
Grantee:Gregório Couto Faria
Support Opportunities: Scholarships abroad - Research