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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Large anisotropic spin relaxation time of exciton bound to donor states in triple quantum wells

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Author(s):
Ullah, S. ; Gusev, G. M. ; Bakarov, A. K. ; Hernandez, F. G. G.
Total Authors: 4
Document type: Journal article
Source: Journal of Applied Physics; v. 121, n. 20 MAY 28 2017.
Web of Science Citations: 3
Abstract

We have studied the spin dynamics of a dense two-dimensional electron gas confined in a GaAs/AlGaAs triple quantum well by using time-resolved Kerr rotation and resonant spin amplification. Strong anisotropy of the spin relaxation time up to a factor of 10 was found between the electron spins oriented in-plane and out-of-plane when the excitation energy is tuned to an exciton bound to neutral donor transition. We model this anisotropy using an internal magnetic field and the inhomogeneity of the electron g-factor. The data analysis allows us to determine the direction and magnitude of this internal field in the range of a few mT for our studied structure, which decreases with the sample temperature and optical power. The dependence of the anisotropic spin relaxation was directly measured as a function of several experimental parameters: excitation wavelength, sample temperature, pump-probe time delay, and pump power. Published by AIP Publishing. (AU)

FAPESP's process: 14/25981-7 - Generating and mapping spin currents with space and time resolution
Grantee:Felix Guillermo Gonzalez Hernandez
Support type: Regular Research Grants
FAPESP's process: 15/16191-5 - The research in new materials involving high magnetic fields and low temperatures
Grantee:Gennady Gusev
Support type: Research Projects - Thematic Grants
FAPESP's process: 09/15007-5 - Magnetic dynamics in semiconductor nanocrystals
Grantee:Felix Guillermo Gonzalez Hernandez
Support type: Regular Research Grants
FAPESP's process: 13/03450-7 - The spin Hall effect in semiconductors
Grantee:Felix Guillermo Gonzalez Hernandez
Support type: Regular Research Grants