| Full text | |
| Author(s): |
Ferreira, Diego H. O.
[1]
;
Vaz, Isabela C. F.
[1]
;
Rubinger, Rero M.
[2]
;
Buono, Camila
[3]
;
Rocha, Leandro S. R.
[4]
;
Ponce, Miguel A.
[3]
;
Longo, Elson
[4]
;
Simoes, Alexandre Z.
[5]
;
Moura, Francisco
[1]
Total Authors: 9
|
| Affiliation: | [1] Univ Fed Itajuba, Unifei Campus Itabira, Rua Irma Ivone Drumond 200, BR-35903087 Itabira, MG - Brazil
[2] Univ Fed Itajuba, Unifei Campus Itajubd, Av BPS 1303, BR-37500903 Itajuba, MG - Brazil
[3] Univ Mar del Plata UNMdP, Inst Mat Sci & Technol INTEMA, Natl Res Council, CONICET, Av Juan B Justo 4302, RA-7600 Mar Del Plata, Buenos Aires - Argentina
[4] Fed Univ Sao Carlos UFSCar, Sao Carlos, SP - Brazil
[5] Sao Paulo State Univ, Sch Engn, UNESP, Guaratingueta - Brazil
Total Affiliations: 5
|
| Document type: | Journal article |
| Source: | PROCESSING AND APPLICATION OF CERAMICS; v. 13, n. 4, p. 360-367, 2019. |
| Web of Science Citations: | 0 |
| Abstract | |
Low resistive electrodes based on Co and Mo co-doped SnO2 were prepared by the conventional solid-state reaction and sintered at 1250 degrees C for 2 h. Concentration of Co2O3 precursor was unchanged (1 mol%), while MoO3 was varied (0.25, 0.50 to 0.75 mol%) to promote conductivity. The structural and microstructural characterization revealed that the samples have a rutile-type structure without secondary phases and large rutile grains with low porosity. Electrical measurements on DC mode have shown a semiconductor behaviour of the SnO2 samples doped with 0.25 and 0.75 at. % of Mo at temperatures below 50 K, indicating their suitability for low-temperature electronic applications. Impedance measurements indicate reduced energy barriers of less than 1 meV formed between highly conductive crystallites for the SnO2 samples doped with 0.25 and 0.75 at. % of Mo. The sample with Mo content of 0.50 at.% presented a higher energy barrier at a few hundredths of eV, with space charges at the crystallite boundaries. (AU) | |
| FAPESP's process: | 08/57872-1 - National Institute for Materials Science in Nanotechnology |
| Grantee: | Elson Longo da Silva |
| Support Opportunities: | Research Projects - Thematic Grants |
| FAPESP's process: | 18/07238-6 - Non-stoichiometric semiconductor gas sensors for detection of distinct gases atmospheres related to patents with INPI records Argentina 20150103953/Brazil 10 2016 028383 3 |
| Grantee: | Elson Longo da Silva |
| Support Opportunities: | Research Grants - Visiting Researcher Grant - International |
| FAPESP's process: | 13/07296-2 - CDMF - Center for the Development of Functional Materials |
| Grantee: | Elson Longo da Silva |
| Support Opportunities: | Research Grants - Research, Innovation and Dissemination Centers - RIDC |
| FAPESP's process: | 18/20590-0 - Novel renewable rare-earth based hybrid nanomaterials for environmental sensing and energy-related applications |
| Grantee: | Leandro Silva Rosa Rocha |
| Support Opportunities: | Scholarships in Brazil - Post-Doctoral |