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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Low-temperature impedance spectroscopic analyses of ceramic electrodes based on Mo and Co co-doped SnO2

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Ferreira, Diego H. O. [1] ; Vaz, Isabela C. F. [1] ; Rubinger, Rero M. [2] ; Buono, Camila [3] ; Rocha, Leandro S. R. [4] ; Ponce, Miguel A. [3] ; Longo, Elson [4] ; Simoes, Alexandre Z. [5] ; Moura, Francisco [1]
Total Authors: 9
[1] Univ Fed Itajuba, Unifei Campus Itabira, Rua Irma Ivone Drumond 200, BR-35903087 Itabira, MG - Brazil
[2] Univ Fed Itajuba, Unifei Campus Itajubd, Av BPS 1303, BR-37500903 Itajuba, MG - Brazil
[3] Univ Mar del Plata UNMdP, Inst Mat Sci & Technol INTEMA, Natl Res Council, CONICET, Av Juan B Justo 4302, RA-7600 Mar Del Plata, Buenos Aires - Argentina
[4] Fed Univ Sao Carlos UFSCar, Sao Carlos, SP - Brazil
[5] Sao Paulo State Univ, Sch Engn, UNESP, Guaratingueta - Brazil
Total Affiliations: 5
Document type: Journal article
Source: PROCESSING AND APPLICATION OF CERAMICS; v. 13, n. 4, p. 360-367, 2019.
Web of Science Citations: 0

Low resistive electrodes based on Co and Mo co-doped SnO2 were prepared by the conventional solid-state reaction and sintered at 1250 degrees C for 2 h. Concentration of Co2O3 precursor was unchanged (1 mol%), while MoO3 was varied (0.25, 0.50 to 0.75 mol%) to promote conductivity. The structural and microstructural characterization revealed that the samples have a rutile-type structure without secondary phases and large rutile grains with low porosity. Electrical measurements on DC mode have shown a semiconductor behaviour of the SnO2 samples doped with 0.25 and 0.75 at. % of Mo at temperatures below 50 K, indicating their suitability for low-temperature electronic applications. Impedance measurements indicate reduced energy barriers of less than 1 meV formed between highly conductive crystallites for the SnO2 samples doped with 0.25 and 0.75 at. % of Mo. The sample with Mo content of 0.50 at.% presented a higher energy barrier at a few hundredths of eV, with space charges at the crystallite boundaries. (AU)

FAPESP's process: 08/57872-1 - National Institute for Materials Science in Nanotechnology
Grantee:Elson Longo da Silva
Support type: Research Projects - Thematic Grants
FAPESP's process: 18/07238-6 - Non-stoichiometric semiconductor gas sensors for detection of distinct gases atmospheres related to patents with INPI records Argentina 20150103953/Brazil 10 2016 028383 3
Grantee:Elson Longo da Silva
Support type: Research Grants - Visiting Researcher Grant - International
FAPESP's process: 13/07296-2 - CDMF - Center for the Development of Functional Materials
Grantee:Elson Longo da Silva
Support type: Research Grants - Research, Innovation and Dissemination Centers - RIDC
Grantee:Leandro Silva Rosa Rocha
Support type: Scholarships in Brazil - Post-Doctorate