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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Processing of BiFeO3 thin films to control their dielectric response

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Author(s):
Reis, S. P. [1, 2] ; Freitas, F. E. [1, 3] ; Araujo, E. B. [1]
Total Authors: 3
Affiliation:
[1] Sao Paulo State Univ, Dept Phys & Chem, Ilha Solteira - Brazil
[2] Fed Inst Educ Sci & Technol Sao Paulo, Votuporanga - Brazil
[3] Univ Rio Verde UniRV, Rio Verde - Brazil
Total Affiliations: 3
Document type: Journal article
Source: Ferroelectrics; v. 560, n. 1, p. 61-69, MAY 18 2020.
Web of Science Citations: 0
Abstract

BiFeO3 (BFO) thin films were studied to control their oxygen-related processing parameters in order to obtain specific electrical characteristics in terms of conductivity and dielectric relaxation. BFO thin films prepared with Fe and Bi excesses and post-annealed in oxygen atmosphere showed higher electrical conductivity and lower conduction activation energies than single phase ones. Distinct parameters indicated different conduction mechanisms in the films, associated with the first ionization of oxygen vacancies in BFO films with Fe and Bi excesses and the second one in single phase films. Higher conductive films show lower relaxation times compared to single phase ones. (AU)

FAPESP's process: 17/13769-1 - Multiferroic and ferroelectric materials for energy converters: synthesis, properties, phenomenology and applications
Grantee:José Antonio Eiras
Support Opportunities: Research Projects - Thematic Grants