Improvement of the Deep UV Sensor Performance of a beta-Ga2O3 Photodiode by Coupling of Two Planar Diodes

Author(s)

Vieira, Douglas H. ^[1] ; Badiei, Nafiseh ^[2] ; Evans, Jonathan E. ^[2] ; Alves, Neri ^[1] ; Kettle, Jeff ^[3] ; Li, Lijie ^[2]

Affiliation

^[1] UNESP Sao Paulo State Univ, Dept Fis, BR-19060900 Presidente Prudente - Brazil

^[2] Swansea Univ, Multidisciplinary Nanotechnol Ctr, Coll Engn, Swansea SA2 8PP, W Glam - Wales

^[3] Bangor Univ, Sch Elect Engn, Bangor LL57 2DG, Gwynedd - Wales

• Document type: Journal article
• Source: IEEE TRANSACTIONS ON ELECTRON DEVICES; v. 67, n. 11, p. 4947-4952, NOV 2020.
• Web of Science Citations: 0

Abstract

beta-Ga2O3 is one of the promising semiconductormaterials that has beenwidely used in power electronics and ultraviolet (UV) detectors due to its wide bandgap and high sensitivity to UV light. Specifically, for the UV detection application, it has been reported that the photocurrent was in the scale of microamps (mu A), which normally requires sophisticated signal processing units. In this work, a novel approach based upon coupling of two Schottky diodes is reported, leads to a substantial increase in photocurrent (similar to 186 times) when benchmarked against a conventional planar UV photodiode. The detectivity and responsivity of the new device have also been significantly increased; the rectification ratio of this device was measured to be 1.7 x 10(7) with ultralow dark current, when measured in the reverse bias. The results confirm that the approach of coupling two Schottky diodes has enormous potential for improving the optical performance of deep UV sensors. (AU)

• FAPESP's process: 19/14366-3 - Study of beta-Ga2O3 schottky diode aiming solar-blind applications
• Grantee: Douglas Henrique Vieira
• Support Opportunities: Scholarships abroad - Research Internship - Master's degree