| Full text | |
| Author(s): |
Arantes, Adryelle N.
[1]
;
Araujo, Estacio P.
[1]
;
Pellegrini, Manuela
[1]
;
Pedersoli, Andre A.
[1]
;
Chiquito, Adenilson J.
[1]
Total Authors: 5
|
| Affiliation: | [1] Univ Fed Sao Carlos, Dept Fis, NanOLaB, Rodovia Washington Luiz, Km 235, BR-13565905 Sao Carlos, SP - Brazil
Total Affiliations: 1
|
| Document type: | Journal article |
| Source: | PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES; v. 128, APR 2021. |
| Web of Science Citations: | 0 |
| Abstract | |
Single Tin Dioxide nanowire (SnO2NW) field-effect-transistors (FET) devices have been a great candidate to build electronic circuits, as chemical and physical sensors and study low dimensional properties and related effects. Ambipolarity is one of those effects that may direct its use for specific purposes, where a controllable separated unipolar mode can be achieved in one single device. SnO(2)NWs grown by the VLS method were used for single NW devices fabrication by direct photo-lithography using the simple back-gate FET architecture. Single SnO2NWFET's transport properties were explored, where on/off ratio, mobility and carrier density parameters were extracted, resulting in values around 10(5), lower than 0.1 cm(2)/V and in the order of 10(19)/cm(3), respectively. When under ultraviolet (UV) light, all devices presented UV induced ambipolary effect, where on/off states ratio with values of the same order were obtained and ranged from 1.12 to about 19.34. A simple band model was then proposed to explain such behavior. (AU) | |
| FAPESP's process: | 13/19692-0 - Quantitative study of the electronic characteristics of metal-metal oxides nanowires contacts |
| Grantee: | Adenilson José Chiquito |
| Support Opportunities: | Regular Research Grants |
| FAPESP's process: | 13/07296-2 - CDMF - Center for the Development of Functional Materials |
| Grantee: | Elson Longo da Silva |
| Support Opportunities: | Research Grants - Research, Innovation and Dissemination Centers - RIDC |