| Full text | |
| Author(s): |
Rodrigues, Leonarde N.
[1, 2]
;
Scolfaro, Diego
[3]
;
da Conceicao, Lucas
[3, 1]
;
Malachias, Angelo
[4]
;
Couto, Odilon D. D.
[3]
;
Iikawa, Fernando
[3]
;
Deneke, Christoph
[3]
Total Authors: 7
|
| Affiliation: | [1] Ctr Nacl Pesquisa Energia & Mat CNPEM, Lab Nacl Nanotecnol LNNano, BR-13083970 Campinas, SP - Brazil
[2] Univ Fed Vicosa UFV, Dept Fis, BR-36570000 Vicosa, MG - Brazil
[3] Univ Estadual Campinas UNICAMP, Inst Fis Gleb Wataghin, BR-13083859 Campinas, SP - Brazil
[4] Univ Fed Minas Gerais, Dept Fis, BR-31270901 Belo Horizonte, MG - Brazil
Total Affiliations: 4
|
| Document type: | Journal article |
| Source: | ACS APPLIED NANO MATERIALS; v. 4, n. 3, p. 3140-3147, MAR 26 2021. |
| Web of Science Citations: | 0 |
| Abstract | |
Strain-based band structure engineering is a powerful tool to tune the optical and electronic properties of semiconductor nanostructures. We show that we can tune the band structure of InGaAs semiconductor quantum wells and modify the helicity of the emitted light by integrating them into rolled-up heterostructures and changing their geometrical configuration. Experimental results from photoluminescence and photoluminescence excitation spectroscopy demonstrate a strong energy shift of the valence-band states in comparison to flat structures, as a consequence of an inversion of the heavy-hole with the light-hole states in a rolled-up InGaAs quantum well. The inversion and mixing of the band states lead to a strong change in the optical selection rules for the rolled-up quantum wells, which show vanishing spin polarization in the conduction band even under near-resonant excitation conditions. Band structure calculations are carried out to understand the changes in the electronic transitions and to predict the emission and absorption spectra for a given geometrical configuration. Comparison between experiment and theory shows an excellent agreement. These observed profound changes in the fundamental properties can be applied as a strategic route to develop novel optical devices for quantum information technology. (AU) | |
| FAPESP's process: | 12/11382-9 - Optical modulation of semiconductor nanostructures using surface acoustic waves |
| Grantee: | Odilon Divino Damasceno Couto Júnior |
| Support Opportunities: | Research Grants - Young Investigators Grants |
| FAPESP's process: | 16/14001-7 - Growth and fabrication of semiconductor nanomembrane structures for basic research and potential device applications |
| Grantee: | Christoph Friedrich Deneke |
| Support Opportunities: | Regular Research Grants |