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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Oxygen vacancy engineering of TaO (x) -based resistive memories by Zr doping for improved variability and synaptic behavior

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Author(s):
Palhares, Joao H. Quintino [1, 2] ; Beilliard, Yann [2, 3, 4] ; Alibart, Fabien [2, 3, 5] ; Bonturim, Everton [6] ; de Florio, Daniel Z. [1] ; Fonseca, Fabio C. [7] ; Drouin, Dominique [2, 3, 4] ; Ferlauto, Andre S. [1]
Total Authors: 8
Affiliation:
[1] Fed Univ ABC, CECS, BR-09210580 Santo Andre, SP - Brazil
[2] Univ Sherbrooke, Inst Interdisciplinaire Innovat Technol 3IT, Sherbrooke, PQ J1K 0A5 - Canada
[3] CNRS, Lab Nanotechnol Nanosyst LN2, UMI 3463 3IT, Sherbrooke, PQ J1K 0A5 - Canada
[4] Univ Sherbrooke, Inst Quant IQ, Sherbrooke, PQ J1K 2R1 - Canada
[5] Univ Lille, Inst Elect Microelect & Nanotechnol IEMN, F-59650 Villeneuve Dascq - France
[6] Univ Prebiteriana Mackenzie, Sch Engn, Dept Chem, BR-01302907 Sao Paulo, SP - Brazil
[7] IPEN CNEN, Nucl & Energy Res Inst, BR-05508000 Sao Paulo - Brazil
Total Affiliations: 7
Document type: Journal article
Source: Nanotechnology; v. 32, n. 40 OCT 1 2021.
Web of Science Citations: 0
Abstract

Resistive switching (RS) devices are promising forms of non-volatile memory. However, one of the biggest challenges for RS memory applications is the device-to-device (D2D) variability, which is related to the intrinsic stochastic formation and configuration of oxygen vacancy (V-O) conductive filaments (CFs). In order to reduce the D2D variability, control over the formation and configuration of oxygen vacancies is paramount. In this study, we report on the Zr doping of TaO (x) -based RS devices prepared by pulsed-laser deposition as an efficient means of reducing the V-O formation energy and increasing the confinement of CFs, thus reducing D2D variability. Our findings were supported by XPS, spectroscopic ellipsometry and electronic transport analysis. Zr-doped films showed increased V-O concentration and more localized V(O)s, due to the interaction with Zr. DC and pulse mode electrical characterization showed that the D2D variability was decreased by a factor of seven, the resistance window was doubled, and a more gradual and monotonic long-term potentiation/depression in pulse switching was achieved in forming-free Zr:TaO (x) devices, thus displaying promising performance for artificial synapse applications. (AU)

FAPESP's process: 17/11937-4 - A sustainable path to methane conversion by advanced electrochemical technologies
Grantee:Fabio Coral Fonseca
Support Opportunities: Research Grants - Research Centers in Engineering Program
FAPESP's process: 14/50279-4 - Brasil Research Centre for Gas Innovation
Grantee:Julio Romano Meneghini
Support Opportunities: Research Grants - Research Centers in Engineering Program