| Full text | |
| Author(s): |
Total Authors: 2
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| Affiliation: | [1] CNPEM, Brazilian Nanotechnol Natl Lab, BR-13083970 Campinas, SP - Brazil
[2] CNPEM, Ilum Sch Sci, BR-13083970 Campinas, SP - Brazil
Total Affiliations: 2
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| Document type: | Journal article |
| Source: | Nano Letters; v. 21, n. 22, p. 9398-9402, NOV 24 2021. |
| Web of Science Citations: | 0 |
| Abstract | |
Vacancies in materials structure-lowering its atomic density-take the system closer to the atomic limit, to which all systems are topologically trivial. Here we show a mechanism of mediated interaction between vacancies inducing a topologically nontrivial phase. Within an ab initio approach we explore topological transition dependence with the vacancy density in transition metal dichalcogenides. As a case of study, we focus on the PtSe2, for which the pristine form is a trivial semiconductor with an energy gap of 1.2 eV. The vacancies states lead to a large topological gap of 180 meV within the pristine system gap. We derive an effective model describing this topological phase in other transition metal dichalcogenide systems. The mechanism driving the topological phase allows the construction of backscattering protected metallic channels embedded in a semiconducting host. (AU) | |
| FAPESP's process: | 17/02317-2 - Interfaces in materials: electronic, magnetic, structural and transport properties |
| Grantee: | Adalberto Fazzio |
| Support Opportunities: | Research Projects - Thematic Grants |
| FAPESP's process: | 19/20857-0 - Two-dimensional materials and topological phases: prediction and control of its properties |
| Grantee: | Felipe David Crasto de Lima |
| Support Opportunities: | Scholarships in Brazil - Post-Doctoral |