| Full text | |
| Author(s): Show less - |
Alberton, Saulo G.
;
Aguiar, V. A. P.
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Medina, N. H.
;
Added, N.
;
Macchione, E. L. A.
;
Menegasso, R.
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Cesario, G. J.
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Santos, H. C.
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Scarduelli, V. B.
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Alcantara-Nunez, J. A.
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Guazzelli, M. A.
;
Santos, R. B. B.
;
Flechas, D.
Total Authors: 13
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| Document type: | Journal article |
| Source: | MICROELECTRONICS RELIABILITY; v. 137, p. 7-pg., 2022-10-01. |
| Abstract | |
The heavy-ion-induced single-event burnout (SEB) risk in power MOSFETs (metal-oxide-semiconductor field-effect transistors) can be assessed in ground facilities, although it is costly and time-demanding. For this reason, there have been few experimental studies dedicated to investigate the relevant parameter related to the description of ion-induced SEB phenomenon. In this work the heavy-ion-induced SEB in a low-voltage power VDMOSFET (vertical double-diffused MOSFET) is studied using several ion-energy combinations. A self -consistent statistical analysis is carried out in order to elucidate the relationship between charge deposition and SEB triggering. Experimental data is compared to a predictive model from the literature for SEE (single-event effect) worst-case prediction in power MOSFETs, supporting for the first time its relevance to the worst-case prediction in the SEB mechanism. (AU) | |
| FAPESP's process: | 12/03383-5 - Development of methodology for radiation tests on electronic components |
| Grantee: | Nilberto Heder Medina |
| Support Opportunities: | Regular Research Grants |