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An Investigation of Surface Trap Passivated Colloidal (Ag,Cu)(In,Ga)(Se,S)2 Nanoparticles for Thin Film Solar Cell Applications

Grant number: 13/05798-0
Support type:Scholarships in Brazil - Post-Doctorate
Effective date (Start): August 01, 2013
Effective date (End): June 30, 2017
Field of knowledge:Engineering - Materials and Metallurgical Engineering
Principal researcher:Ana Flávia Nogueira
Grantee:Emre Yassitepe
Home Institution: Instituto de Química (IQ). Universidade Estadual de Campinas (UNICAMP). Campinas , SP, Brazil
Associated scholarship(s):14/18327-9 - Surface trap passivated colloidal quantum dots for application in p-n heterojunction thin film solar cells, BE.EP.PD

Abstract

This proposal describes research in materials and processes for synthesis and characterization of surface trap passivated colloidal (Ag,Cu)(In,Ga)(S,Se)2 (ACIGS) chalcopyrite nanoparticles and evaluation of solar cell performance of these nanoparticles as a p-type absorber layer for depleted p-n heterojunction solar cells. (Ag,Cu)(In,Ga)(S,Se)2 based thin film solar cells are one of the most promising solar cell materials due their attractive material properties and established record power conversion efficiencies (PCE) as high as 20.3% in lab modules by vacuum deposition routes. Achieving these efficiencies in manufacturing has proven difficult, but one path toward high efficiency large-scale modules involves utilization of colloidal nanoparticles. The main problems associated with colloidal nanoparticles are the surface defects and long chain surfactans that creates electron hole recombination centers and inhibits charge carrier transport. Recent studies on surface trap passivated p-type PbSxSe1-x colloidal quantum dots has led to impressive PCE (7%) in depleted p-n heterojunction device configuration with n-type TiO2 layer. Our goal is to find effective surface trap passivation mechanisms for colloidal (Ag,Cu)(In,Ga)(S,Se)2 nanoparticles to achieve high PCE assembled with n-type CdS/ZnO or CdS/TiO2 layers for depleted p-n heterojunction solar cell devices. The specific objectives of the proposed research are as follows:*Modify the stoichiometry, particle size of the chalcopyrite compound to synthesize colloidal (Ag,Cu)(In,Ga)(S,Se)2 nanoparticles with band gaps between 1.2 to 1.5 eV for best utilization of solar spectrum.*Passivate the colloidal nanoparticles with organic, inorganic and/or hybrid (inorganic+organic) mechanisms and characterize the electronic, structural properties. *Deposition of passivated p-type (Ag,Cu)(In,Ga)(S,Se)2 nanoparticles by spin coating and assemble the depleted p-n heterojunction device with n-type nanoparticulated TiO2, CdS/TiO2 or CdS/ZnO layers to evaluate the photovoltaic device performance.

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Scientific publications
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
YASSITEPE, EMRE; YANG, ZHENYU; VOZNYY, OLEKSANDR; KIM, YOUNGHOON; WALTERS, GRANT; CASTANEDA, JUAN ANDRES; KANJANABOOS, PONGSAKORN; YUAN, MINGJIAN; GONG, XIWEN; FAN, FENGJIA; et al. Amine-Free Synthesis of Cesium Lead Halide Perovskite Quantum Dots for Efficient Light-Emitting Diodes. ADVANCED FUNCTIONAL MATERIALS, v. 26, n. 47, p. 8757-8763, . (13/05798-0, 13/16911-2, 14/18327-9)
FERNANDES, FELIPE CICARONI; GADIOLI, RENAN; YASSITEPE, EMRE; DE PAOLI, MARCO-AURELIO. Polyamide-6 Composites Reinforced With Cellulose Fibers and Fabricated by Extrusion: Effect of Fiber Bleaching on Mechanical Properties and Stability. Polymer Composites, v. 38, n. 2, p. 299-308, . (10/17804-7, 13/05798-0)
CASTANEDA, JUAN A.; NAGAMINE, GABRIEL; YASSITEPE, EMRE; BONATO, LUIZ G.; VOZNYY, OLEKSANDR; HOOGLAND, SJOERD; NOGUEIRA, ANA F.; SARGENT, EDWARD H.; BRITO CRUZ, CARLOS H.; PADILHA, LAZARO A.. Efficient Biexciton Interaction in Perovskite Quantum Dots Under Weak and Strong Confinement. ACS NANO, v. 10, n. 9, p. 8603-8609, . (14/21928-4, 13/05798-0, 13/16911-2, 14/18327-9)

Please report errors in scientific publications list by writing to: cdi@fapesp.br.