| Full text | |
| Author(s): |
Patricio, M. A. Tito
;
Villegas-Lelovsky, L.
;
de Oliveira, E. R. Cardozo
;
Marques, G. E.
;
Lapierre, R. R.
;
Toropov, A. I.
;
Pusep, Yu. A.
Total Authors: 7
|
| Document type: | Journal article |
| Source: | PHYSICAL REVIEW B; v. 108, n. 3, p. 9-pg., 2023-07-21. |
| Abstract | |
The influence of the valence band structure on the optical properties of quantum wells with a parabolic potential, consisting of AlxGa1-xAs and In1-xGaxAsyP1-y alloys, is studied and compared. The distribution of photogenerated carriers over the parabolic potential is found to be responsible for specific selection rules: the recombination due to only odd-indexed confined levels is observed. The reason for this is the accumulation of photogenerated holes at the center of the parabolic potential, which results in interband electron-hole recombination occurring at the center of the parabolic quantum wells. Furthermore, a specific valence band structure is found to be responsible for the magnetic-field-induced change in the photoluminescence circular polarization. In particular, at a certain magnetic field, the hybridization of the states of a heavy hole and a light hole results in the intersection of Landau levels with different spins, which leads to the observed change in the circular polarization of photoluminescence. The processes of long-term spin relaxation of heavy holes in both studied parabolic quantum wells are demonstrated, and the corresponding times are obtained. (AU) | |
| FAPESP's process: | 22/02132-0 - Study of carrier and spin dynamics processes in hydrodynamic electron-hole plasma formed in mesoscopic GaAs channels and in AlGaAs and InGaAsP quantum wells |
| Grantee: | Iouri Poussep |
| Support Opportunities: | Regular Research Grants |