| Full text | |
| Author(s): |
Braga, Osvaldo M.
;
Delfino, Cristian A.
;
Kawabata, Rudy M. S.
;
Pinto, Luciana D.
;
Vieira, Gustavo S.
;
Pires, Mauricio P.
;
Souza, Patricia L.
;
Marega, Euclydes
;
Carlin, John A.
;
Krishna, Sanjay
Total Authors: 10
|
| Document type: | Journal article |
| Source: | OPTO-ELECTRONICS REVIEW; v. 31, p. 6-pg., 2023-01-01. |
| Abstract | |
The viability of epitaxial regrowth of non-intentionally doped InP to passivate lateral mesa surfaces of InGaAs photodiodes lattice-matched to InP is investigated, evaluating whether the residual doping of the regrown layer can be responsible for un unexpected increase of the surface current. The effect of residual doping is evaluated via numerical calculations of dark current, considering the range of doping concentrations expected for non-intentionally doped InP. The calculations show that the increase in dark current due to the residual doping of the regrown InP layer is not enough to justify the observed increase in surface current. On the other hand, the technique is still valid as a passivation method if the photodetector pixel is isolated by etching only the top contact layer. (AU) | |
| FAPESP's process: | 16/05516-3 - Development of fabrication process of focal plane arrays |
| Grantee: | Gustavo Soares Vieira |
| Support Opportunities: | Scholarships abroad - Research |