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Tuning of the Lande g-factor in AlxGa1-xAs/AlAs single and double quantum wells

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Author(s):
Hernandez, F. G. G. ; Gusev, G. M. ; Bakarov, A. K. ; IOP
Total Authors: 4
Document type: Journal article
Source: WAKE CONFERENCE 2021; v. 456, p. 5-pg., 2013-01-01.
Abstract

We report on the spin dynamics of a high mobility two-dimensional electron gas in a AlxGa(1-x)as/AlAs double quantum well structure. For high electron density samples, the g-factor was measured using time-resolved Kerr rotation technique. The g-factor tuning capability was observed by changing the aluminum content x independently in each well. Experiments demonstrated an unusual spin dephasing time robustness for high excitation power. The effect of the interaction between wells was analyzed in samples with different tunneling barriers. Results were compared with experiments on single well systems demonstrating higher spin polarization generation, longer spin dephasing time, and coupling for the double structures. (AU)

FAPESP's process: 09/15007-5 - Magnetic dynamics in semiconductor nanocrystals
Grantee:Felix Guillermo Gonzalez Hernandez
Support Opportunities: Regular Research Grants
FAPESP's process: 10/09880-5 - The spin Hall effect in wide and double quantum wells
Grantee:Gennady Gusev
Support Opportunities: Regular Research Grants