Advanced search
Start date
Betweenand


Slow-Wave Distributed MEMS Phase Shifter in CMOS for Millimeter-Wave Applications

Full text
Author(s):
Verona, B. M. ; Rehder, G. P. ; Serrano, A. L. C. ; Carreno, M. N. P. ; Ferrari, P. ; IEEE
Total Authors: 6
Document type: Journal article
Source: 2014 44TH EUROPEAN MICROWAVE CONFERENCE (EUMC); v. N/A, p. 4-pg., 2014-01-01.
Abstract

This paper presents the first experimental results of a distributed-MEMS phase shifter for millimeter waves applications. It is based on a tunable shielded coplanar waveguide (S-CPW) fabricated using the back-end-of-line (BEOL) of AMS 0.35 mu m CMOS technology. A simple maskless post-CMOS etch was used to remove the BEOL silicon dioxide and release the ribbons of the S-CPW that can be electrostatically displaced, changing the capacitance of the S-CPW, altering the phase of the propagating signal. A phase shift of 25.1 degrees with an insertion loss of 0.7 dB was measured in an 1120 mu m-long S-CPW at 60 GHz, under a 60 V bias voltage, resulting in a Figure of Merit of 36 degrees/dB. The developed approach also leads to a small insertion loss variation of +/- 0.1 dB. These first results should be further improved by optimizing the mechanical design. (AU)

FAPESP's process: 11/18167-3 - RF MEMS for millimetric waves using commercial CMOS process
Grantee:Gustavo Pamplona Rehder
Support Opportunities: Research Grants - Young Investigators Grants