Quantum spin Hall phase in stanene-derived overlayers on passivated SiC substrates

Author(s)

Matusalem, Filipe ; Bechstedt, Friedhelm ; Marques, Marcelo ; Teles, Lara K.

• Document type: Journal article
• Source: PHYSICAL REVIEW B; v. 94, n. 24, p. 5-pg., 2016-12-13.

Abstract

We present atomic and electronic structure studies using first-principles calculations of two-dimensional topological insulators, stanene and fluorostanene, deposited on 4H-SiC(0001) substrates. We demonstrate the stability of H- or F-passivated honeycomb crystals due to a van der Waals interaction between the adsorbate and substrate. Despite destroyed inversion symmetry and biaxial strain the calculations of the band structures and Z(2) topological invariants predict that the quantum spin Hall (QSH) phase of stanene on H-passivated SiC as well as fluorostanene on H-and F-passivated SiC survives the interaction with the substrate. Our findings should serve as guidance for the epitaxial growth of tin-based QSH systems on wide-band-gap semiconductors. (AU)

• FAPESP's process: 14/13907-7 - Physical properties of two-dimensional materials
• Grantee: Lara Kühl Teles
• Support Opportunities: Research Grants - Visiting Researcher Grant - International