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Gate control of the spin mobility through the modification of the spin-orbit interaction in two-dimensional systems

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Author(s):
Luengo-Kovac, M. ; Moraes, F. C. D. ; Ferreira, G. J. ; Ribeiro, A. S. L. ; Gusev, G. M. ; Bakarov, A. K. ; Sih, V. ; Hernandez, F. G. G.
Total Authors: 8
Document type: Journal article
Source: PHYSICAL REVIEW B; v. 95, n. 24, p. 6-pg., 2017-06-30.
Abstract

Spin drag measurements were performed in a two-dimensional electron system set close to the crossed spin helix regime and coupled by strong intersubband scattering. In a sample with an uncommon combination of long spin lifetime and high charge mobility, the drift transport allows us to determine the spin-orbit field and the spin mobility anisotropies. We used a random walk model to describe the system dynamics and found excellent agreement for the Rashba and Dresselhaus couplings. The proposed two-subband system displays a large tuning lever arm for the Rashba constant with gate voltage, which provides a new path towards a spin transistor. Furthermore, the data show large spin mobility controlled by the spin-orbit constants setting the field along the direction perpendicular to the drift velocity. This work directly reveals the resistance experienced in the transport of a spin-polarized packet as a function of the strength of anisotropic spin-orbit fields. (AU)

FAPESP's process: 14/25981-7 - Generating and mapping spin currents with space and time resolution
Grantee:Felix Guillermo Gonzalez Hernandez
Support Opportunities: Regular Research Grants
FAPESP's process: 16/50018-1 - Spin noise in two-dimensional electron gases
Grantee:Felix Guillermo Gonzalez Hernandez
Support Opportunities: Regular Research Grants
FAPESP's process: 09/15007-5 - Magnetic dynamics in semiconductor nanocrystals
Grantee:Felix Guillermo Gonzalez Hernandez
Support Opportunities: Regular Research Grants
FAPESP's process: 13/03450-7 - The spin Hall effect in semiconductors
Grantee:Felix Guillermo Gonzalez Hernandez
Support Opportunities: Regular Research Grants
FAPESP's process: 15/16191-5 - The research in new materials involving high magnetic fields and low temperatures
Grantee:Gennady Gusev
Support Opportunities: Research Projects - Thematic Grants