Niobium Oxide Films Deposited by Reactive Sputtering: Effect of Oxygen Flow Rate

Author(s)

Fernandes, Silvia L. ; Affonco, Lucas J. ; Junior, Roberto A. R. ; da Silva, Jose H. D. ; Longo, Elson ; Graeff, Carlos F. de O.

• Document type: Journal article
• Source: JOVE-JOURNAL OF VISUALIZED EXPERIMENTS; v. N/A, n. 151, p. 6-pg., 2019-09-01.

Abstract

Reactive sputtering is a versatile technique used to form compact films with excellent homogeneity. In addition, it allows easy control over deposition parameters such as gas flow rate that results in changes on composition and thus in the film required properties. In this report, reactive sputtering is used to deposit niobium oxide films. A niobium target is used as metal source and different oxygen flow rates to deposit niobium oxide films. The oxygen flow rate was changed from 3 to 10 sccm. The films deposited under low oxygen flow rates show higher electrical conductivity and provide better perovskite solar cells when used as electron transport layer. (AU)

• FAPESP's process: 13/09963-6 - Construction and characterization of vertical organic field effect transistors by using nanostructured materials as intermediate electrode
• Grantee: Luíz Gustavo Simão Albano
• Support Opportunities: Scholarships in Brazil - Doctorate (Direct)
• FAPESP's process: 17/11072-3 - CDMF - Center for the Development of Functional Materials
• Grantee: Silvia Leticia Fernandes
• Support Opportunities: Scholarships in Brazil - Post-Doctoral
• FAPESP's process: 13/07296-2 - CDMF - Center for the Development of Functional Materials
• Grantee: Elson Longo da Silva
• Support Opportunities: Research Grants - Research, Innovation and Dissemination Centers - RIDC
• FAPESP's process: 17/18916-2 - Optimization of the Growth Process of Co3O4 Films for Photovoltaic and Photocatalytic Applications
• Grantee: Jose Humberto Dias da Silva
• Support Opportunities: Regular Research Grants