Preparation and characterization of an organic field effect transistor using a ver...
| Grant number: | 13/09963-6 |
| Support type: | Scholarships in Brazil - Doctorate (Direct) |
| Effective date (Start): | September 01, 2013 |
| Effective date (End): | February 28, 2018 |
| Field of knowledge: | Physical Sciences and Mathematics - Physics |
| Principal Investigator: | Carlos Frederico de Oliveira Graeff |
| Grantee: | Luíz Gustavo Simão Albano |
| Home Institution: | Faculdade de Ciências (FC). Universidade Estadual Paulista (UNESP). Campus de Bauru. Bauru , SP, Brazil |
| Associated research grant: | 13/07296-2 - CDMF - Center for the Development of Functional Materials, AP.CEPID |
| Associated scholarship(s): | 14/25332-9 - Bioprotonic transistors using eumelanin thin films, BE.EP.DD |
Abstract This direct doctorate project is based on the construction and characterization of Vertical Organic Field Effect Transistors (VOFETs) by using different nanostructured materials as intermediate electrode. Special attention will be given to obtaining an intermediate electrode that meets the requirements of this type of device, in other words, a good electrical conductor in such a manner that the electrical potential is uniform throughout the contact and with high permeability electric fields. For this, we proposed to use two nanostructures with attractive properties that enable this application: Carbon Nanotubes (CNTs) and Indium Tin Oxide nanowires (ITO nanowires). In order to obtain high quality in thin films based on these nanostructures, various deposition techniques such as dielectrophoresis, spin-coating and other possible techniques will be tested and evaluated in order to verify which technique is the most appropriate for the formation of thin films with properties required to compose the intermediate electrode devices. Initially, with purpose to obtain a significant improvement in the electrical characteristics of the devices, the ante and subsequent layers of VOFETs will be built by using materials previously selected, considering as principal variable only the intermediate electrode. The characterization of the transistors will be made from the obtained IxV curves of three terminals in order to obtain low values of leakage current, high values of transconductance and high rates ON/OFF. Finally, the success of this technology will allow the use of other materials in the different layers of the device, a possible alternative is the use of melanin as substitute in the organic layer. (AU) | |