Advanced search
Start date
Betweenand

Preparation and characterization of an organic field effect transistor using a vertical architecture

Grant number: 13/26973-5
Support type:Scholarships in Brazil - Master
Effective date (Start): August 01, 2014
Effective date (End): July 31, 2016
Field of knowledge:Physical Sciences and Mathematics - Physics
Cooperation agreement: Coordination of Improvement of Higher Education Personnel (CAPES)
Principal Investigator:Neri Alves
Grantee:Gabriel Leonardo Nogueira
Home Institution: Faculdade de Ciências e Tecnologia (FCT). Universidade Estadual Paulista (UNESP). Campus de Presidente Prudente. Presidente Prudente , SP, Brazil

Abstract

Organic transistors have emerged in the 1980s with the purpose to allow the study of the properties of the materials involved. The increase on the carrier mobility in organic semiconductors has enabled the fabrication of organic transistors with reasonable performance, allowing some practical applications of these devices. However, due to the low density of charge, the performance of organic transistors is still poor, requiring further development of new optimized structures. A promising possibility is to prepare transistors in a vertical architecture, where the source and drain electrodes are horizontally arranged and, therefore, the conduction occurs in the vertical direction, the channel width being determined by the thickness of the semiconductor layer itself. This master's project proposes the preparation of a Vertical Organic Field Effect Transistor (VOFET) using gold (Au) or aluminium (Al) electrodes, poly(3-hexylthiophene) (P3HT) as the semiconducting material and polysilsesquioxane (PSQ) or aluminium oxide (Al2O3) as the insulating materials. P3HT and PSQ will be deposited by spin-coating, while the Al2O3 is obtained by anodization. The electrical characterization of VOFETs will be performed by obtaining the transfer and output curves, through which parameters such as mobility, on/off ratios and threshold voltage (VT) can be obtained, allowing the evaluation of the devices performance. The project aims to contribute for the improvement of organic transistors by using different architectures of manufacturing. Successful investigations will allow the development of devices for application in flexible organic circuits. (AU)

Scientific publications
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
NOGUEIRA, GABRIEL LEONARDO; OZORIO, MAIZA DA SILVA; DA SILVA, MARCELO MARQUES; MORAIS, ROGERIO MIRANDA; ALVES, NERI. Middle Electrode in a Vertical Transistor Structure Using an Sn Layer by Thermal Evaporation. ELECTRONIC MATERIALS LETTERS, v. 14, n. 3, p. 319-327, MAY 2018. Web of Science Citations: 0.
Academic Publications
(References retrieved automatically from State of São Paulo Research Institutions)
NOGUEIRA, Gabriel Leonardo. Preparação e caracterização de um transistor orgânico de efeito de campo com arquitetura vertical. 2016. 94 f. Master's Dissertation - Universidade Estadual Paulista (Unesp) Faculdade de Ciências.

Please report errors in scientific publications list by writing to: cdi@fapesp.br.