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A novel and promising Penta-Octa-Based silicon carbide semiconductor

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Author(s):
Laranjeira, Jose A. S. ; Martins, Nicolas F. ; Denis, Pablo A. ; Sambrano, Julio R.
Total Authors: 4
Document type: Journal article
Source: FLATCHEM; v. 46, p. 9-pg., 2024-06-08.
Abstract

Penta-octa-graphene (POG) consists of pentagonal and octagonal carbon rings, hosting type-I and type-II Dirac line nodes due to its sp2 and sp3 mixed bonds. Inorganic analogs of 2D carbon lattices have increased the potential applications and changed the main properties of carbon-based structures. Therefore, this work proposes penta-octa-graphene based on silicon carbide using DFT simulations. With a cohesive energy of -5.22 eV/atom, POG-Si5C4 is energetically viable in comparison with other silicon carbide-based monolayers. Phonon dispersion analysis confirms the POG-Si5C4 dynamical stability. MD simulations demonstrate that this new monolayer can withstand temperatures up to 1020 K. Electronic analysis indicates it is a semiconductor with an indirect band gap transition of 2.02 eV. The mechanical properties exhibit anisotropy, with Young's modulus ranging from 38.65 to 99.47 N/m and an unusual negative Poisson's ratio of -0.09. The band edge alignment suggests that POG-Si5C4 holds potential for hydrogen generation through photocatalytic water splitting. This research opens possibilities for designing inorganic penta-octa-based structures and provides insights for future experimental and theoretical studies focused on exploring and optimizing advanced silicon-carbide 2D materials. (AU)

FAPESP's process: 20/01144-0 - Electronic, structural properties of ABO4 compounds (A = Ba, Ca, Cd, Sr and Pb and M = Mo and W) and modeling of morphological transformations of their nanoparticles
Grantee:José Artigas dos Santos Laranjeira
Support Opportunities: Scholarships in Brazil - Master
FAPESP's process: 22/03959-6 - Two-dimensional structures for energy storage and gas sensors: theory aimed at experimentalists and for scientific dissemination
Grantee:Julio Ricardo Sambrano
Support Opportunities: Regular Research Grants
FAPESP's process: 22/14576-0 - Molecular dynamics simulations of novel two-dimensional materials
Grantee:Nicolas Ferreira Martins
Support Opportunities: Scholarships abroad - Research Internship - Master's degree
FAPESP's process: 22/16509-9 - Computational simulations of heterostructures based on transition metal dichalcogenides, MXenes and new carbon allotropes
Grantee:José Artigas dos Santos Laranjeira
Support Opportunities: Scholarships in Brazil - Doctorate
FAPESP's process: 22/00349-2 - Performance of CO adsorption on inorganic SiC-based graphenylene doped with Fe, Co and Mn
Grantee:Nicolas Ferreira Martins
Support Opportunities: Scholarships in Brazil - Master