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Electronic and spin transport in Bismuthene with magnetic impurities

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Author(s):
Pezo, Armando ; Lima, Felipe Crasto de ; Fazzio, Adalberto
Total Authors: 3
Document type: Journal article
Source: Solid State Communications; v. 376, p. 6-pg., 2023-10-22.
Abstract

Topological insulators have remained as candidates for future electronic devices since their first experimental realization in the past decade. The existence of topologically protected edge states could be exploited to generate a robust platform and develop quantum computers. In this work we explore the role of magnetic impurities in the transport properties of topological insulators, in particular, we study the effect on the zigzag bismuthene nanoribbon edge states conductivity. By means of realistic ab initio calculations we simulate the interaction between magnetic adatoms and topological insulators, furthermore, our main goal is to obtain the transport properties for large samples as it would be possible to localize edge states at large scales. (AU)

FAPESP's process: 17/18139-6 - Machine learning for Materials Science: 2D materials discovery and design
Grantee:Gabriel Ravanhani Schleder
Support Opportunities: Scholarships in Brazil - Doctorate
FAPESP's process: 17/02317-2 - Interfaces in materials: electronic, magnetic, structural and transport properties
Grantee:Adalberto Fazzio
Support Opportunities: Research Projects - Thematic Grants
FAPESP's process: 19/04527-0 - Interface between crystalline topological insulators and 2D-trivial materials: defect proximity study
Grantee:Bruno Focassio
Support Opportunities: Scholarships in Brazil - Doctorate (Direct)
FAPESP's process: 16/14011-2 - Electronic properties: interfaces between topological insulators (TI-TI)
Grantee:Marcio Jorge Teles da Costa
Support Opportunities: Scholarships in Brazil - Post-Doctoral