| Full text | |
| Author(s): |
de Souza, Adelcio M.
;
Celino, Daniel R.
;
Ragi, Regiane
;
Romero, Murilo A.
Total Authors: 4
|
| Document type: | Journal article |
| Source: | 2024 IEEE 24TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY, NANO 2024; v. N/A, p. 6-pg., 2024-01-01. |
| Abstract | |
This paper presents a physics-based model for ballistic field-effect nanotransistors, focusing on devices based on a two-dimensional indium selenide (InSe) channel. Through an analytical solution of the Poisson equation and making use of the Landauer formalism, we derive concise expressions for current-voltage (I-V) and capacitance-voltage (C-V) characteristics. Validation of the resulting curves is performed against numerical simulations and experimental data, demonstrating an excellent agreement. (AU) | |
| FAPESP's process: | 18/13537-6 - Compact modelling of MOS transistors based on quantum effects |
| Grantee: | Adelcio Marques de Souza |
| Support Opportunities: | Scholarships in Brazil - Doctorate |
| FAPESP's process: | 21/06569-1 - High-speed strategic internet technologies |
| Grantee: | Evandro Conforti |
| Support Opportunities: | Research Projects - Thematic Grants |