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Comparative Passivation of Si(100) by H2 and D2 Atmospheres under Simultaneous Xe+ Bombardment: An X-ray Photoelectron Spectroscopy Analysis

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Author(s):
Antunes, V. G. ; Jimenez, M. J. M. ; Cemin, F. ; Figueroa, C. A. ; Alvarez, F.
Total Authors: 5
Document type: Journal article
Source: Langmuir; v. 40, n. 9, p. 7-pg., 2024-02-21.
Abstract

This study presents a comparison of H-2 and D-2 passivation on Si(100) under simultaneous Xe+ ion bombardment. The impact of Xe+ ions causes significant damage to the substrate surface, leading to an increase in H-2 (D-2) retention as Si-H (Si-D) bonds. The ion bombardment conditions are precisely controlled using a Kaufman ion gun. The atomic concentrations on the surface of the sample were investigated by quasi-in situ X-ray photoelectron spectroscopy. A simple methodology is employed to estimate the H (D) chemical concentration and the cover ratio of the sample, with regard to the oxygen concentration through residual water chemisorption present in the vacuum vessel. Differences in passivation are expected when using H-2 or D-2 atmospheres because their retained scission energies and physisorption properties differ. The results indicate an increase of the sticking coefficient for D-2 and H-2 under the ion bombardment. It is also found that the flux of H-2 (D-2) impinging on the surface contributes to play an important role in the whole process. Finally, a model is proposed to describe the phenomenon of the passivation of Si under Xe+ ion bombardment in the presence of H-2 (D-2). (AU)

FAPESP's process: 19/18460-4 - Synthesis, thermo-mechanical and tribological properties of advanced multicomponent materials of high entropy
Grantee:Fernando Alvarez
Support Opportunities: Regular Research Grants
FAPESP's process: 19/00757-0 - Study and control of the crystalline orientations in MoS2/TiO2 and MoS2/TiO2:H heterojunctions and their effects on its physicochemical properties
Grantee:Fernando Graniero Echeverrigaray
Support Opportunities: Scholarships in Brazil - Post-Doctoral
FAPESP's process: 18/24461-0 - Study and synthesis of High Entropy Alloy (HEA) thin films
Grantee:Felipe Cemin
Support Opportunities: Scholarships in Brazil - Post-Doctoral