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High Stability, Piezoelectric Response, and Promising Photocatalytic Activity on the New Pentagonal CGeP4 Monolayer

Full text
Author(s):
Laranjeira, Jose A. S. ; Martins, Nicolas ; Denis, Pablo A. ; Sambrano, Julio
Total Authors: 4
Document type: Journal article
Source: ACS PHYSICAL CHEMISTRY AU; v. 5, n. 1, p. 10-pg., 2024-12-04.
Abstract

This study introduces the penta-structured semiconductor p-CGeP4 through density functional theory simulations, which possesses an indirect band gap transition of 3.20 eV. Mechanical analysis confirms the mechanical stability of p-CGeP4, satisfying Born-Huang criteria. Notably, p-CGeP4 has significant direct (e(31) = -11.27 and e(36) = -5.34 x 10(-10) C/m) and converse (d(31) = -18.52 and d(36) = -13.18 pm/V) piezoelectric coefficients, surpassing other pentagon-based structures. Under tensile strain, the band gap energy increases to 3.31 eV at 4% strain, then decreases smoothly to 1.97 eV at maximum stretching, representing an similar to 38% variation. Under compressive strain, the band gap decreases almost linearly to 2.65 eV at -8% strain and then drops sharply to 0.97 eV, an similar to 69% variation. Strongly basic conditions result in a promising band alignment for the new p-CGeP4 monolayer. This suggests potential photocatalytic behavior across all tensile strain regimes and significant compression levels (epsilon = 0% to -8%). This study highlights the potential of p-CGeP4 for groundbreaking applications in nanoelectronic devices and materials engineering. (AU)

FAPESP's process: 22/16509-9 - Computational simulations of heterostructures based on transition metal dichalcogenides, MXenes and new carbon allotropes
Grantee:José Artigas dos Santos Laranjeira
Support Opportunities: Scholarships in Brazil - Doctorate
FAPESP's process: 22/00349-2 - Performance of CO adsorption on inorganic SiC-based graphenylene doped with Fe, Co and Mn
Grantee:Nicolas Ferreira Martins
Support Opportunities: Scholarships in Brazil - Master
FAPESP's process: 20/01144-0 - Electronic, structural properties of ABO4 compounds (A = Ba, Ca, Cd, Sr and Pb and M = Mo and W) and modeling of morphological transformations of their nanoparticles
Grantee:José Artigas dos Santos Laranjeira
Support Opportunities: Scholarships in Brazil - Master
FAPESP's process: 22/14576-0 - Molecular dynamics simulations of novel two-dimensional materials
Grantee:Nicolas Ferreira Martins
Support Opportunities: Scholarships abroad - Research Internship - Master's degree
FAPESP's process: 22/03959-6 - Two-dimensional structures for energy storage and gas sensors: theory aimed at experimentalists and for scientific dissemination
Grantee:Julio Ricardo Sambrano
Support Opportunities: Regular Research Grants