Strain and spin dynamics approach in Ga(As)Sb quantum dot/well hybrid nanostructures
Design and characterization of inorganic-organic interfaces for photovoltaic devices
| Full text | |
| Author(s): |
Martini, S.
;
Quivy, A. A.
;
Silva, E. C. F. da
;
Leite, J. R.
Total Authors: 4
|
| Document type: | Journal article |
| Source: | Applied Physics Letters; v. 81, n. 15, p. 2863-2865, Oct. 2002. |
| Field of knowledge: | Physical Sciences and Mathematics - Physics |
| Abstract | |
The surface segregation of indium (In) atoms was investigated during the growth of InGaAs layers by reflection high-energy electron diffraction (RHEED). We observed that the decay constant of the RHEED-oscillation amplitude during growth depends on the growth conditions and is related, in a very simple way, to the segregation coefficient of the In atoms in the InGaAs layers. (AU) | |
| FAPESP's process: | 98/12779-0 - Experimental and theoretical study of the epitaxial semiconductor nanostructures derived from III-V compounds |
| Grantee: | Gennady Gusev |
| Support Opportunities: | Research Projects - Thematic Grants |