| Full text | |
| Author(s): |
E. Laureto
[1]
;
E. A. Meneses
[2]
;
W. Carvalho Jr.
[3]
;
A. A. Bernussi
[4]
;
E. Ribeiro
[5]
;
E. C. F. da Silva
[6]
;
J. B. B. de Oliveira
[7]
Total Authors: 7
|
| Affiliation: | [1] Universidade Estadual de Campinas. Instituto de Física 'Gleb Wataghin' - Brasil
[2] Universidade Estadual de Campinas. Instituto de Física 'Gleb Wataghin' - Brasil
[3] Laboratório Nacional de Luz Síncrotron - Brasil
[4] Laboratório Nacional de Luz Síncrotron - Brasil
[5] Laboratório Nacional de Luz Síncrotron - Brasil
[6] Universidade de São Paulo. Instituto de Física - Brasil
[7] Universidade Estadual Paulista. Departamento de Física - Brasil
Total Affiliations: 7
|
| Document type: | Journal article |
| Source: | Brazilian Journal of Physics; v. 32, p. 314-317, 2002-06-00. |
| Field of knowledge: | Physical Sciences and Mathematics - Physics |
| Abstract | |
Photoluminescence (PL) and excitation PL measurements have been performed at different temperatures in a number of lattice-matched GaAs/In0.49Ga0.51P quantum wells, where the uctuations of the potential energy are comparable with the thermal energy of the photocreated carriers. Two samples with different well widths allow to observe a series of anomalous e ects in their optical response. The observed effects are related to the disorder in the interface, characterizing uctuations in the confinement potential energy. It is proposed that the carrier relaxation processes occur either at the local minima or at the absolute minimum of the confinement potential, depending on the ratio of the thermal energy and the magnitude of the potential fluctuations. (AU) | |