Direct Observation of Tetragonal Distortion in Epitaxial Structures through Secondary Peak Split in a Synchrotron Radiation Renninger Scan

Author(s)

de Menezes, Alan S. ^[1] ; dos Santos, Adenilson O. ^{[2, 1]} ; Almeida, Juliana M. A. ^{[3, 1]} ; Bortoleto, Jose R. R. ^[4] ; Cotta, Monica A. ^[1] ; Morelhao, Sergio L. ^[5] ; Cardoso, Lisandro P. ^[1]

Affiliation

^[1] Univ Estadual Campinas, IFGW, BR-13083970 Campinas, SP - Brazil

^[2] Univ Fed Maranhao, CCSST, BR-65900410 Imperatriz, MA - Brazil

^[3] Univ Fed Sergipe, Nucleo Fis, BR-49500000 Itabaiana, SE - Brazil

^[4] Unesp, Engn Controle & Automacao, BR-18087180 Sorocaba, SP - Brazil

^[5] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo - Brazil

• Document type: Journal article
• Source: Crystal Growth & Design; v. 10, n. 8, p. 3436-3441, AUG 2010.
• Web of Science Citations: 6

Abstract

This paper reports a direct observation of an interesting split of the (022)(022) four-beam secondary peak into two (022) and (022) three-beam peaks, in a synchrotron radiation Renninger scan (phi-scan), as an evidence of the layer tetragonal distortion in two InGaP/GaAs (001) epitaxial structures with different thicknesses. The thickness, composition, (a perpendicular to) perpendicular lattice parameter, and (01) in-plane lattice parameter of the two epitaxial ternary layers were obtained from rocking curves (omega-scan) as well as from the simulation of the (022)(022) split, and then, it allowed for the determination of the perpendicular and parallel (in-plane) strains. Furthermore, (022)(022) omega:phi mappings were measured in order to exhibit the multiple diffraction condition of this four-beam case with their split measurement. (AU)

• FAPESP's process: 07/08609-3 - Structural analysis of semiconductor nanostructures using high resolution X-ray diffraction
• Grantee: Lisandro Pavie Cardoso
• Support Opportunities: Regular Research Grants