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Synchrotron radiation study on the growth of al and in nitride nanostructures and thin films by Atomic Layer Deposition

Grant number: 10/18548-4
Support type:Research Grants - Visiting Researcher Grant - Brazil
Duration: March 01, 2011 - November 30, 2011
Field of knowledge:Physical Sciences and Mathematics - Physics
Principal Investigator:Harry Westfahl Junior
Grantee:Harry Westfahl Junior
Visiting researcher: Sukarno Olavo Ferreira
Visiting researcher institution: Universidade Federal de Viçosa (UFV). Centro de Ciências Exatas e Tecnológicas, Brazil
Home Institution: Laboratório Nacional de Luz Síncrotron (LNLS). Centro Nacional de Pesquisa em Energia e Materiais (CNPEM). Ministério da Ciência, Tecnologia, Inovações e Comunicações (Brasil). Campinas , SP, Brazil
Associated research grant:09/09027-3 - Study of growth, crystallization and surface structure of thin films, multilayers and nanostructures obtained by the atomic layer deposition method, AP.JP

Abstract

The main purpose of this project is the study of the growth dynamics and structural properties of AlN, InN and AlInN thin films and nanostructures obtained by the atomic layer deposition (ALD) method. This technique is becoming increasingly relevant to electronic device fabrication in the last few years, and is in comissioning process at the Brazilian Synchrotron Light Laboratory (LNLS) through a young researcher FAPESP project. We intent to use x-ray diffraction and spectroscopy techniques to investigate conditions that may lead to epitaxial growth of ALD synthesized materials into selected substrates. The actual project requires a modification of the ALD reactor to grow nitrides using amonia as the nitrogen precursor. Such modifications will directly impact on the plans to grow materials in-situ at the x-ray diffraction and absorption beamlines of the LNLS. (AU)

Scientific publications
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
SILES, PABLO F.; DE PAULI, MURIEL; BOF BUFON, CARLOS CESAR; FERREIRA, SUKARNO O.; BETTINI, JEFFERSON; SCHMIDT, OLIVER G.; MALACHIAS, ANGELO. Tuning resistive switching on single-pulse doped multilayer memristors. Nanotechnology, v. 24, n. 3 JAN 25 2013. Web of Science Citations: 12.

Please report errors in scientific publications list by writing to: cdi@fapesp.br.