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Synchrotron radiation study on the growth of al and in nitride nanostructures and thin films by Atomic Layer Deposition


The main purpose of this project is the study of the growth dynamics and structural properties of AlN, InN and AlInN thin films and nanostructures obtained by the atomic layer deposition (ALD) method. This technique is becoming increasingly relevant to electronic device fabrication in the last few years, and is in comissioning process at the Brazilian Synchrotron Light Laboratory (LNLS) through a young researcher FAPESP project. We intent to use x-ray diffraction and spectroscopy techniques to investigate conditions that may lead to epitaxial growth of ALD synthesized materials into selected substrates. The actual project requires a modification of the ALD reactor to grow nitrides using amonia as the nitrogen precursor. Such modifications will directly impact on the plans to grow materials in-situ at the x-ray diffraction and absorption beamlines of the LNLS. (AU)

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Scientific publications
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
SILES, PABLO F.; DE PAULI, MURIEL; BOF BUFON, CARLOS CESAR; FERREIRA, SUKARNO O.; BETTINI, JEFFERSON; SCHMIDT, OLIVER G.; MALACHIAS, ANGELO. Tuning resistive switching on single-pulse doped multilayer memristors. Nanotechnology, v. 24, n. 3, . (09/09027-3, 10/18548-4)

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