Electrodeposition and characterization of undoped and nitrogen-doped ZnSe films

Author(s)

Manzoli, A. ^{[1, 2]} ; Eguiluz, K. I. B. ^{[3, 2]} ; Salazar-Banda, G. R. ^{[3, 2]} ; Machado, S. A. S. ^[2]

Affiliation

^[1] Embrapa Agr Instrumentat, Natl Nanotechnol Lab Agribusiness LNNA, BR-13560970 Sao Carlos, SP - Brazil

^[2] Univ Sao Paulo, Inst Chem Sao Carlos IQSC, BR-13560970 Sao Carlos, SP - Brazil

^[3] Univ Tiradentes, Inst Technol & Res, BR-49032490 Aracaju, SE - Brazil

• Document type: Journal article
• Source: Materials Chemistry and Physics; v. 121, n. 1-2, p. 58-62, MAY 15 2010.
• Web of Science Citations: 10

Abstract

Semiconducting films of (n-type) ZnSe and (p-type) nitrogen-doped ZnSe were electrodeposited by a linear-sweep voltammetric technique on to a substrate of fluorine-tin oxide (FM) glass ceramics. The films were characterized by scanning electron microscopy, energy-dispersive X-ray analysis and grazing-incidence X-ray diffraction. The results indicated that the material was deposited uniformly over the substrate, forming clusters when the Zn content of the bath was 0.1 mol L(-1) and a film when it was 0.2 or 0.3 mol L(-1). The effectiveness of doping the films with nitrogen by adding ammonium sulfate to the deposition solution was assessed by measuring the film-electrolyte interface capacitance (C) at various applied potentials (E(ap)) and plotting Mott-Schottky curves (C(-2) vs E(ap)), whose slope sign was used to identify p-type ZnSe. (C) 2009 Elsevier B.V. All rights reserved. (AU)