| Full text | |
| Author(s): |
Dartora, C. A.
[1]
;
Cabrera, G. G.
Total Authors: 2
|
| Affiliation: | [1] Universidade Estadual de Campinas (UNICAMP). Instituto de Física Gleb Wataghin - Brasil
Total Affiliations: 2
|
| Document type: | Journal article |
| Source: | Journal of Applied Physics; v. 97, n. 3, p. 033708-1-033708-8, Feb. 2005. |
| Field of knowledge: | Physical Sciences and Mathematics - Physics |
| Abstract | |
In this paper we analyze the main transport properties of a simple resonant magnetic tunnel junction (FM-IS-METAL-IS-FM structure) taking into account both elastic and magnon-assisted tunneling processes at low voltages and temperatures near 0° K. We show the possibility of magnetoresistance inversion as a consequence of inelastic processes and spin-dependent transmission coefficients. Resonant tunneling can also explain the effect of scattering by impurities located inside an insulating barrier. (AU) | |