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(Reference retrieved automatically from Google Scholar through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Strain field of InAs QDs on GaAs (001) substrate surface: characterization by synchrotron X-ray Renninger scanning

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Author(s):
Morelhão‚ SL ; Avanci‚ LH ; Freitas‚ R. ; Quivy‚ AA
Total Authors: 4
Document type: Journal article
Source: Microelectronics Journal; v. 36, n. 3, p. 219-222, 2005.