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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Investigation of the surface properties of CaF2 layers on (111) Si as a function of growth temperature

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Author(s):
Suela, J. [1, 2] ; Abramof, E. [2] ; Rappl, P. H. O. [2] ; Freitas, F. E. [2] ; Closs, H. [2] ; Boschetti, C. [2]
Total Authors: 6
Affiliation:
[1] Inst Fed Educ Ciencia & Technol Norte de Minas Ge, Dept Fis, BR-39480000 Januaria, MG - Brazil
[2] Inst Nacl Pesquisas Espaciais, Lab Associado Sensores & Mat, BR-12245970 Sao Jose Dos Campos, SP - Brazil
Total Affiliations: 2
Document type: Journal article
Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS; v. 44, n. 18 MAY 11 2011.
Web of Science Citations: 0
Abstract

This work reports on the study of surface properties of CaF2 films (30 and 10 nm thick) grown on (1 1 1) Si by molecular beam epitaxy at substrate temperatures from 400 to 700 degrees C. Reflection high-energy electron diffraction (RHEED) analysis indicated that CaF2 films with smooth surfaces were obtained in temperature ranges 500-550 degrees C and 620-700 degrees C, while at temperatures from 400 to 500 degrees C and in the vicinity of 600 degrees C the films showed grains randomly oriented on top of the surface. Atomic force microscopy (AFM) investigation corroborated with the RHEED results and confirmed the presence of grains on the film surface, with an evident transition near 600 degrees C. The dependence of grain density on the growth temperature followed the expectation from the RHEED analysis. The arithmetical average roughness of the CaF2 surface obtained from the AFM images remained below 1 nm for the best quality films. The x-ray reflectivity curves of all samples exhibited well-defined interference fringes, whose oscillation damping behaviour agreed with the RHEED and AFM results. The CaF2 layer thickness and roughness were accurately determined by a best-fit procedure applied to the x-ray reflectivity data. By combining all results, the temperature range between 525 and 550 degrees C was found to be the most suitable to grow CaF2 layers on (1 1 1) Si. For growth temperatures above 650 degrees C, pinholes and cracks started to reduce the CaF2 surface quality. (AU)

FAPESP's process: 07/50968-0 - Research into new materials involving intense magnetic fields and low temperatures
Grantee:Nei Fernandes de Oliveira Junior
Support Opportunities: Research Projects - Thematic Grants