Morphological and optical properties of p-type GaAs (001) layers doped with silicon

Lamas‚ TE; Martini‚ S.; da Silva‚ MJ; Quivy‚ AA; Leite‚ JR

Advanced search

Search - Use quotation marks to get a more specific result

Index

Field of knowledge

Start date

Betweenand

(Reference retrieved automatically from Google Scholar through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Morphological and optical properties of p-type GaAs (001) layers doped with silicon

Full text
Author(s):	Lamas‚ TE ; Martini‚ S. ; da Silva‚ MJ ; Quivy‚ AA ; Leite‚ JR Total Authors: 5
Document type:	Journal article
Source:	Microelectronics Journal; v. 34, n. 5, p. 701-703, 2003.

FAPESP's process:	98/12779-0 - Experimental and theoretical study of the epitaxial semiconductor nanostructures derived from III-V compounds
Grantee:	Gennady Gusev
Support Opportunities:	Research Projects - Thematic Grants

Short URL