Accurate band gaps of AlGaN‚ InGaN‚ and AlInN alloys calculations based on LDA-1/2 approach

Pelá‚ RR; Caetano‚ C.; Marques‚ M.; Ferreira‚ LG; Furthmuller‚ J.; Teles‚ LK

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(Reference retrieved automatically from Google Scholar through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Accurate band gaps of AlGaN‚ InGaN‚ and AlInN alloys calculations based on LDA-1/2 approach

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Author(s):	Pelá‚ RR ; Caetano‚ C. ; Marques‚ M. ; Ferreira‚ LG ; Furthmuller‚ J. ; Teles‚ LK Total Authors: 6
Document type:	Journal article
Source:	Applied Physics Letters; v. 98, n. 15, p. 151907-151907, 2011.

FAPESP's process:	08/11423-1 - Simulation of quantum devices based on spin
Grantee:	Ronaldo Rodrigues Pelá
Support Opportunities:	Scholarships in Brazil - Doctorate (Direct)


FAPESP's process:	06/05858-0 - Theoretical study of semiconductor alloys for applications in spintronics and optoelectronics
Grantee:	Lara Kühl Teles
Support Opportunities:	Research Grants - Young Investigators Grants

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