Magnetic characteristics of nanocrystalline GaMnN films deposited by reactive sputtering

Author(s)

Leite, D. M. G. ^[1] ; Pereira, A. L. J. ^[1] ; Iwamoto, W. A. ^[2] ; Pagliuso, P. G. ^[2] ; Lisboa-Filho, P. N. ^[1] ; da Silva, J. H. D. ^[1]

Affiliation

^[1] UNESP Univ Estadual Paulista, Adv Mat Grp, BR-17033360 Bauru, SP - Brazil

^[2] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP - Brazil

• Document type: Journal article
• Source: SOLID STATE SCIENCES; v. 17, p. 97-101, MAR 2013.
• Web of Science Citations: 1

Abstract

The magnetic characteristics of Ga1-xMnxN nanocrystalline films (x = 0.08 and x = 0.18), grown by reactive sputtering onto amorphous silica substrates (a-SiO2), are shown. Further than the dominant paramagnetic-like behaviour, both field- and temperature-dependent magnetization curves presented some particular features indicating the presence of secondary magnetic phases. A simple and qualitative analysis based on the Brillouin function assisted the interpretation of these secondary magnetic contributions, which were tentatively attributed to antiferromagnetic and ferromagnetic phases. (C) 2012 Elsevier Masson SAS. All rights reserved. (AU)

• FAPESP's process: 05/02249-0 - Control of the deposition parameters of GaN and Ga(1-x)Mn(x)N hetero-epitaxial films prepared by the RF magnetron sputtering technique
• Grantee: Jose Humberto Dias da Silva
• Support Opportunities: Regular Research Grants