| Full text | |
| Author(s): |
Total Authors: 4
|
| Affiliation: | [1] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo - Brazil
[2] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090 - Russia
Total Affiliations: 2
|
| Document type: | Journal article |
| Source: | Physical Review B; v. 88, n. 16 OCT 29 2013. |
| Web of Science Citations: | 19 |
| Abstract | |
The experimental demonstration of the spin Hall effect in a high mobility two-dimensional electron system is reported. The spatial dependence is studied by Kerr rotation as a function of the external magnetic field using an applied electric field amplitude and direction as control parameters. We observe that the effect is robust in a bilayer structure with a nonzero Rashba coefficient displayed by an electrically controllable internal magnetic field, a large spin Hall conductivity in the range of the universal intrinsic value, and a mobility-enhanced spin diffusion constant. With the application of an unidirectional electric field, the role of the spin drift was also studied. The data was analyzed following both phenomenological and microscopic approaches and compared with experimental references in a single-layer configuration. (AU) | |
| FAPESP's process: | 10/09880-5 - The spin Hall effect in wide and double quantum wells |
| Grantee: | Gennady Gusev |
| Support Opportunities: | Regular Research Grants |
| FAPESP's process: | 13/03450-7 - The spin Hall effect in semiconductors |
| Grantee: | Felix Guillermo Gonzalez Hernandez |
| Support Opportunities: | Regular Research Grants |
| FAPESP's process: | 09/15007-5 - Magnetic dynamics in semiconductor nanocrystals |
| Grantee: | Felix Guillermo Gonzalez Hernandez |
| Support Opportunities: | Regular Research Grants |