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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Phonon localization in cubic GaN/AlN superlattices

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Author(s):
Rodrigues, A. D. [1] ; de Godoy, M. P. F. [1] ; Mietze, C. [2] ; As, D. J. [2]
Total Authors: 4
Affiliation:
[1] Univ Fed Sao Carlos UFSCar, Dept Fis, BR-13565905 Sao Carlos, SP - Brazil
[2] Univ Paderborn, Dept Phys, D-33098 Paderborn - Germany
Total Affiliations: 2
Document type: Journal article
Source: Solid State Communications; v. 186, p. 18-22, MAY 2014.
Web of Science Citations: 5
Abstract

To enhance the device's performance a better understanding of the confinement of polar optical phonons in the heterostructures should be achieved. In this work, we investigated a set of three cubic GaN/AlN superlattices (SL) grown by plasma assisted Molecular Beam Epitaxy (MBE) on 3C-SiC substrates by structural and optical measurements. Reciprocal Space Mapping (RSM) at the (113) reflections revealed the SL satellite peaks and the strain in the structures as well photoluminescence spectra evidence the quantum confinement. Different line broadenings in the Raman spectra measured in each heterostructure indicate that the longitudinal optical phonons of GaN describe different localization lengths. Through the application of the spatial correlation model we have quantified the localization length of these phonons and established a correlation with the GaN layer thicknesses. For the first time it is presented localized optical phonons (LO) in cubic GaN layers. (C) 2014 Elsevier Ltd. All rights reserved. (AU)

FAPESP's process: 12/07608-1 - International Conference on Superlattices, Nano-Structures and Nano-Devices
Grantee:Marcio Peron Franco de Godoy
Support Opportunities: Research Grants - Meeting - Abroad