Advanced search
Start date
Betweenand
(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Pressure-induced valence change of YbNiGe3 investigated by resonant x-ray emission spectroscopy at the Yb L-3 edge

Full text
Author(s):
Show less -
Sato, Hitoshi [1] ; Yamaoka, Hitoshi [2] ; Utsumi, Yuki [3] ; Nagata, Heisuke [3] ; Avila, Marcos A. [4] ; Ribeiro, Raquel A. [4] ; Umeo, Kazunori [5] ; Takabatake, Toshiro [6, 7] ; Zekko, Yumiko [8] ; Mizuki, Jun'ichiro [8, 9] ; Lin, Jung-Fu [10] ; Hiraoka, Nozomu [11] ; Ishii, Hirofumi [11] ; Tsuei, Ku-Ding [11] ; Namatame, Hirofumi [1] ; Taniguchi, Masaki [1, 3]
Total Authors: 16
Affiliation:
Show less -
[1] Hiroshima Univ, Hiroshima Synchrotron Radiat Ctr, Higashihiroshima 7398526 - Japan
[2] RIKEN, SPring Ctr 8, Sayo, Hyogo 6795148 - Japan
[3] Hiroshima Univ, Grad Sch Sci, Higashihiroshima 7398526 - Japan
[4] Univ Fed ABC, Ctr Ciencias Nat & Humanas, BR-09210971 Santo Andre, SP - Brazil
[5] Hiroshima Univ, N BARD, Cryogen & Instrumental Anal Div, Higashihiroshima 7398526 - Japan
[6] Hiroshima Univ, Inst Adv Mat Res, Higashihiroshima 7398530 - Japan
[7] Hiroshima Univ, AdSM, Dept Quantum Matter, Higashihiroshima 7398530 - Japan
[8] Kwansei Gakuin Univ, Grad Sch Sci & Technol, Sanda, Hyogo 6691337 - Japan
[9] Japan Atom Energy Agcy, SPring 8, Sayo, Hyogo 6795148 - Japan
[10] Univ Texas Austin, Dept Geol Sci, Austin, TX 78712 - USA
[11] Natl Synchrotron Radiat Res Ctr, Hsinchu 30076 - Taiwan
Total Affiliations: 11
Document type: Journal article
Source: Physical Review B; v. 89, n. 4 JAN 10 2014.
Web of Science Citations: 14
Abstract

Pressure dependence of the Yb valence in YbNiGe3 has been investigated up to 15.6 GPa at 300 K and up to 7.7 GPa at 17 K by means of x-ray absorption spectroscopy in L alpha(1) partial fluorescence yield mode and resonant x-ray emission spectroscopy around the Yb L-3 absorption edge. The Yb valence in YbNiGe3 at ambient pressure strongly fluctuates with the mean valence of v = 2.52 +/- 0.01 at 300 K. The Yb valence rapidly changes toward a trivalent state with pressure up to similar to 5 GPa, slowly increases up to similar to 10 GPa, and then reaches a saturated value of v similar to 2.87 at 15.6 GPa. The Yb valence at 17 K slightly decreases compared to that at 300 K; v similar to 2.45 at ambient pressure and similar to 2.72 at 7.7 GPa. We found that the pressure-induced change in the intensity of a quadrupole component in the x-ray absorption spectra shows the same trend as the Yb valence in YbNiGe3. In contrast to YbNiGe3, the Yb valence in YbNiSi3 is nearly 3 at ambient pressure with almost no temperature dependence. (AU)

FAPESP's process: 11/23795-3 - Looking for new and better thermoelectrics
Grantee:Raquel de Almeida Ribeiro
Support Opportunities: Regular Research Grants
FAPESP's process: 12/17562-9 - Preparation of oriented single crystals for studies on electronic, magnetic and thermal anisotropies
Grantee:Marcos de Abreu Avila
Support Opportunities: Regular Research Grants
FAPESP's process: 11/19924-2 - Study and development of advanced novel materials: electronic, magnetic and nanostructured: an interdisciplinary approach
Grantee:Carlos Rettori
Support Opportunities: Research Projects - Thematic Grants