Effect of pressure-assisted thermal annealing on the optical properties of ZnO thin films

Author(s)

Berger, Danielle ^[1] ; Kubaski, Evaldo Toniolo ^[2] ; Sequinel, Thiago ^[1] ; da Silva, Renata Martins ^[3] ; Tebcherani, Sergio Mazurek ^{[3, 4]} ; Varela, Jose Arana ^[1]

Affiliation

^[1] UNESP, Inst Chem, BR-14800900 Araraquara, SP - Brazil

^[2] Itajara Minerios Ltda, BR-84010050 Ponta Grossa, PR - Brazil

^[3] Univ Estadual Ponta Grossa, BR-84030900 Ponta Grossa, PR - Brazil

^[4] Fed Technol Univ Parana, BR-84016210 Ponta Grossa, PR - Brazil

• Document type: Journal article
• Source: LUMINESCENCE; v. 28, n. 6, p. 942-947, NOV 2013.
• Web of Science Citations: 3

Abstract

ZnO thin films were prepared by the polymeric precursor method. The films were deposited on silicon substrates using the spin-coating technique, and were annealed at 330 degrees C for 32h under pressure-assisted thermal annealing and under ambient pressure. Their structural and optical properties were characterized, and the phases formed were identified by X-ray diffraction. No secondary phase was detected. The ZnO thin films were also characterized by field-emission scanning electron microscopy, Fourier transform infrared spectroscopy, photoluminescence and ultraviolet emission intensity measurements. The effect of pressure on these thin films modifies the active defects that cause the recombination of deep level states located inside the band gap that emit yellow-green (575nm) and orange (645nm) photoluminescence. Copyright (c) 2012 John Wiley \& Sons, Ltd. (AU)

• FAPESP's process: 98/14324-0 - Multidisciplinary Center for Development of Ceramic Materials
• Grantee: Elson Longo da Silva
• Support Opportunities: Research Grants - Research, Innovation and Dissemination Centers - RIDC
• FAPESP's process: 09/11099-2 - PREPARATION AND CHARACTERIZATION OF CaCu3Ti4O12 THIN FILMS BY HIGH PRESSURE IM SILICON SUBSTRATE WITH DIFFERENT ELECTRODES
• Grantee: Thiago Sequinel
• Support Opportunities: Scholarships in Brazil - Doctorate