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(Reference retrieved automatically from SciELO through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

CVD diamond films in large area obtained by successive steps of growth

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Author(s):
A.R. Alves [1] ; A. Amorim ; J. Eichenberger Neto [3] ; V.J. Trava-Airoldi [4] ; E.J. Corat [5] ; J.R. Moro [6]
Total Authors: 6
Affiliation:
[1] Universidade São Francisco. Engenharia e Ciência dos Materiais. Programa de Pós-Graduação Strictu Sensu
[3] Universidade São Francisco. Engenharia e Ciência dos Materiais. Programa de Pós-Graduação Strictu Sensu
[4] Instituto Nacional de Pesquisas Espaciais. Laboratório Associado de Sensores e Materiais
[5] Instituto Nacional de Pesquisas Espaciais. Laboratório Associado de Sensores e Materiais
[6] Universidade São Francisco. Engenharia e Ciência dos Materiais. Programa de Pós-Graduação Strictu Sensu
Total Affiliations: 6
Document type: Journal article
Source: MATERIA-RIO DE JANEIRO; v. 13, n. 3, p. 569-578, 2008-09-00.
Abstract

The aim of this work was the reduction of the intrinsic stress caused by the impurities added in the diamond film growth process by Chemical Vapor Deposition (CVD) in a hot filament reactor (HFCVD). Silicon <100> substrate of 250 µm thickness with a deposition surface of great area (45 cm²), was treated after each growth run through the immersion of the sample in a saturated solution of H2SO4 and CrO3 and, after that, in a H2O2:NH4OH solution 1:1. After this procedure, new stage of growth was carried through. The CVD diamond film was identified and characterized by Raman Scattering Spectroscopy (RSS) and Scanning Electron Microscopy (SEM). The application of this technique showed better results compared to previous one. The thickness of the deposited CVD diamond film doubled, obtaining lesser residual stress in the diamond film. CVD diamond films of 60 mm thickness were obtained with high quality and uniformity. (AU)