Advanced search
Start date

X-ray diffraction and scattering in materials: advanced methods II

Grant number: 19/01946-1
Support Opportunities:Regular Research Grants
Duration: July 01, 2020 - December 31, 2022
Field of knowledge:Physical Sciences and Mathematics - Physics - Condensed Matter Physics
Principal Investigator:Sérgio Luiz Morelhão
Grantee:Sérgio Luiz Morelhão
Host Institution: Instituto de Física (IF). Universidade de São Paulo (USP). São Paulo , SP, Brazil


X-ray crystallography is the most awarded area of applied physics due to its importance in studying the atomic structure of materials and biological systems. With large worldwide investments in new radiation sources, as well as the advent of materials and devices from new technologies, the need of developing new methodologies and mentoring researchers with deep knowledge of x-ray diffraction and scattering processes have become increasingly imperative in cut-edge researches. As example of the diversity of fields requiring such knowledge, recent works in several systems are listed here: new magnetic materials, optoelectronic devices, magnetic epitaxial films and topological insulators, amino acid crystals with structural changes and, more recently, high energy x-ray focusing optics, multi-detector panels for X-ray microscopy, and thermoelectric materials. These works result from the synergy between many fields of knowledge, aggregating researchers from national and international institutes, and also from the computational resources and procedures in x-ray crystallography that we have developed over the years. Further, progress of these research lines, and most important, the development of new methodologies needed for cutting-edge research that will only be possible in the near future, require adequate logistics for the use of time and resources. In this proposal we are applying for resources to optimize our working conditions here at the Institute of Physics of the University of São Paulo (IFUSP). We aim at minimum conditions for in-house research, agility for accomplishing collaborations and experiments in other facilities, and mentoring of young scientist. For researches with single crystals and nanostructured devices, the IFUSP already has infrastructure and several equipments (x-ray generator, monochromator, goniometer, detector) acquired through previous supports from FAPESP. However, the low flux of the x-ray source (conventional tube without focusing optics) has been a limiting factor in using the equipments available here in the researches currently under development. Although the budget requested here is above the ceiling for this line of funding (individual proposal), I would like to emphasize that such cost is only due to one equipment, an x-ray source (generator and focusing optics), which is fundamental to make the other equipments already available here productive and to allow the continuity of most of our collaborations and research lines, as detailed in the scope of this proposal. (AU)

Articles published in Agência FAPESP Newsletter about the research grant:
Articles published in other media outlets (0 total):
More itemsLess items

Scientific publications
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
KAGERER, P.; FORNARI, C. I.; BUCHBERGER, S.; MORELHAO, S. L.; VIDAL, R. C.; TCAKAEV, A.; ZABOLOTNYY, V.; WESCHKE, E.; HINKOV, V.; KAMP, M.; et al. Molecular beam epitaxy of antiferromagnetic (MnBi2Te4)(Bi2Te3) thin films on BaF2 (111). Journal of Applied Physics, v. 128, n. 13, . (19/01946-1)
FORNARI, I, CELSO; BENTMANN, HENDRIK; MORELHAO, SERGIO L.; PEIXOTO, THIAGO R. F.; RAPPL, PAULO H. O.; TCAKAEV, ABDUL-VAKHAB; ZABOLOTNYY, VOLODYMYR; KAMP, MARTIN; LEE, TIEN-LIN; MIN, CHUL-HEE; et al. Incorporation of Europium in Bi2Te3 Topological Insulator Epitaxial Films. Journal of Physical Chemistry C, v. 124, n. 29, p. 16048-16057, . (16/22366-5, 19/01946-1)

Please report errors in scientific publications list by writing to: