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Spin effects in the electronic, optical and transport properties of extended and confined carrier systems

Grant number: 06/05765-1
Support type:Research Projects - Thematic Grants
Duration: November 01, 2007 - October 31, 2012
Field of knowledge:Physical Sciences and Mathematics - Physics
Principal Investigator:Gilmar Eugenio Marques
Grantee:Gilmar Eugenio Marques
Home Institution: Centro de Ciências Exatas e de Tecnologia (CCET). Universidade Federal de São Carlos (UFSCAR). São Carlos , SP, Brazil
Co-Principal Investigators:Yara Galvão Gobato
Assoc. researchers:Fernando Iikawa ; Guilherme Matos Sipahi ; José Carlos Rossi ; Maria José Santos Pompeu Brasil ; Victor Lopez Richard
Associated grant(s):12/07608-1 - International Conference on Superlattices, Nano-Structures and Nano-Devices, AR.EXT
10/11231-5 - Raman scattering in ZnO nanostructures and magnetoluminescence properperties InGaAs quantum wires, AV.EXT
09/14671-9 - Electron Raman scattering in quantum wires: Dresselhaus and Rashba inversion asymmetries, AV.EXT
09/06180-5 - 9th International Conference on research in high magnetic fields, AR.EXT
Associated scholarship(s):11/10074-6 - Spin effects in the electronic, optical and transport properties of extended and confined carrier systems, BP.PD
11/07872-8 - Experimental study of spin effect in semiconductor heterostructures, BP.DR
09/13758-3 - Electronic structure and optical properties of coupled quantum rings, BP.PD

Abstract

The main objective of this project is to establish and strength the collaboration between theoretical and experimental research groups for the study of different phenomena related to the manipulation of the spin degree of freedom of carriers in magnetic and non-magnetic semiconductor nanostructures. The three basic lines of the project are: i) design and growth of samples with optical windows and electrical contacts; ii) simultaneous recording of optical and transport spin-related effects in these samples; iii) theoretical simulation of optical and transport effects associated to the spin of extended and confined states and elaboration of device proposals. Three international groups will be working on the sample production: One is formed by professors Mohamed Henini and Laurence Eaves at the University of Nottingham, UK, that will grow III-V samples with and without magnetic layers. The other one is leaded by professor Laurens W. Molenkamp, at the University of Wurzburg, Germany, that will deliver II-VI magnetic samples based on ZnSe/ZnBeSe/ZnMnSe semiconductors. Finally, the third team, headed by Prof. Maria Tamargo, of the Physics Department, at Brooklyn City College of University of New York USA, is responsible for the II-VI non-magnetic double barrier samples built on CdZnSe-CdSe-CdZnSe. We shall study, both experimentally and theoretically, spin effects on the electric current and on the light emission in resonant tunneling devices with both built-in diluted-magnetic and non-magnetic layers. The third line is conceived to carry out the complementary theoretical research on confined as well as extended systems along with the calculations related directly with the experimental measurements described in the second topic. We shall be studying the effects of the spin-orbit interaction on the spin-splitting in several magnetic and non-magnetic systems proposed, with and without external magnetic fields. These endeavors will be focused on the effective Landè g-factor dependence on quantum confinement, growth direction and magnetic field strength, along with the study of spin polarization of electrons and holes and spin-polarized injection in double barrier structures based on magnetic and non-magnetic semiconductor alloys. Different proposals on spin filters for optical and transport devices maybe proposed and characterized during the period of this project. (AU)