Deposition of thick DLC films using plasma immersion with pulsed bias on the substrate holder between 0 and 20 kV

• Grant number: 10/00117-7
• Support Opportunities: Research Grants - Visiting Researcher Grant - International
• Start date: August 16, 2010
• End date: August 27, 2010
• Field of knowledge: Physical Sciences and Mathematics - Physics - Condensed Matter Physics
• Principal Investigator: Maria Cecília Barbosa da Silveira Salvadori
• Grantee: Maria Cecília Barbosa da Silveira Salvadori
• Visiting researcher: Ian Brown
• Visiting researcher institution: Pessoa Física - EUA, United States
• Host Institution: Instituto de Física (IF). Universidade de São Paulo (USP). São Paulo , SP, Brazil

Abstract

In this project we propose initially to produce hard DLC films on silicon, doing carbon implantation into the surface, to create an interface of about 100 nm, obtaining excellent adhesion between film and substrate. The original aspect for this part of the project is to previously estimate the ion implantation depth and implanted carbon concentration in the substrate using numerical simulation by the software TRIDYN. The films will be characterized by nanoindentation, scanning electron microscopy and atomic force microscopy. The final goal will be obtaining thick DLC films with good substrate adhesion. (AU)