| Grant number: | 10/18548-4 |
| Support Opportunities: | Research Grants - Visiting Researcher Grant - Brazil |
| Start date: | March 01, 2011 |
| End date: | November 30, 2011 |
| Field of knowledge: | Physical Sciences and Mathematics - Physics - Condensed Matter Physics |
| Principal Investigator: | Harry Westfahl Junior |
| Grantee: | Harry Westfahl Junior |
| Visiting researcher: | Sukarno Olavo Ferreira |
| Visiting researcher institution: | Universidade Federal de Viçosa (UFV). Centro de Ciências Exatas e Tecnológicas, Brazil |
| Host Institution: | Associação Brasileira de Tecnologia de Luz Síncrotron (ABTLuS). Ministério da Ciência, Tecnologia e Inovação (Brasil). Campinas , SP, Brazil |
| Associated research grant: | 09/09027-3 - Study of growth, crystallization and surface structure of thin films, multilayers and nanostructures obtained by the atomic layer deposition method, AP.JP |
Abstract
The main purpose of this project is the study of the growth dynamics and structural properties of AlN, InN and AlInN thin films and nanostructures obtained by the atomic layer deposition (ALD) method. This technique is becoming increasingly relevant to electronic device fabrication in the last few years, and is in comissioning process at the Brazilian Synchrotron Light Laboratory (LNLS) through a young researcher FAPESP project. We intent to use x-ray diffraction and spectroscopy techniques to investigate conditions that may lead to epitaxial growth of ALD synthesized materials into selected substrates. The actual project requires a modification of the ALD reactor to grow nitrides using amonia as the nitrogen precursor. Such modifications will directly impact on the plans to grow materials in-situ at the x-ray diffraction and absorption beamlines of the LNLS. (AU)
| Articles published in Agência FAPESP Newsletter about the research grant: |
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