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Development of a novel kind of ion implanter

Grant number: 11/12891-1
Support type:Research Grants - Visiting Researcher Grant - International
Duration: January 15, 2012 - January 28, 2012
Field of knowledge:Physical Sciences and Mathematics - Physics
Principal Investigator:Maria Cecília Barbosa da Silveira Salvadori
Grantee:Maria Cecília Barbosa da Silveira Salvadori
Visiting researcher: Efim Mikhailovitch Oks
Visiting researcher institution: Siberian Branch of the Russian Academy of Sciences (SB RAS), Russia
Home Institution: Instituto de Física (IF). Universidade de São Paulo (USP). São Paulo , SP, Brazil


This project is divided into three parts, as described below. The first part is the development and construction of a new type of ion implanter that will constitute a significant technological contribution. This device for ion implantation will be of interest to the ion source and ion implantation communities, worldwide. The second part of the project refers to the use of the new ion implanter for ceramic surface modification in order to change its electrical conductivity. For this purpose, ion implantation of gold will be carried out and the results will be compared with a theoretical model that we developed based on percolation of metal nanoparticles formed in polymers. The study of ion implantation in ceramics will be of great interest to the areas of materials and surface modification. The application for these conductive surface ceramics includes particle accelerators and high voltage isolation. Finally, the third part of the project is surface modification of substrates for cell culture. In this part of the project, we will exploit periodic morphologies in various metric scales and surface modification by plasma and ion implantation (using the new implanter). The materials to be modified for subsequent use as substrates for cell cultures are the polymer SU-8 and PDMS (polydimethylsiloxane), diamond like carbon (DLC) and diamond. As the final part of the work, we will project surfaces composing morphology and treatment with plasma and/or ion implantation to obtain the ideal situation for cell culture and to obtain the most adverse situation for the same cell cultures. With this information it will be possible to develop modified surfaces where the culture of cells occurs in selective areas. We can cite at least two possible applications for surfaces with such features: tissue engineering and bio devices. (AU)